Bénistant, C: search on Z-Library

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1

The effect of interatomic potential in molecular dynamics simulation of low energy ion implantation

H.Y. Chan, K. Nordlund, J. Peltola, H.-J.L. Gossmann, N.L. Ma, M.P. Srinivasan, F. Benistant, Lap Chan

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2005

Language:

english

File:

PDF, 367 KB

english, 2005

2

[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - 14nm FinFET Device Boost via 2nd Generation Fins Optimized for High Performance CMOS Applications

Bazizi, E. M., Banghart, E. K., Zhu, B., Tng, J. H. M., Benistant, F., Hu, Y., He, X., Zhou, D., Lo, H.-C., Choi, D., Lee, J. G.

Year:

2018

Language:

english

File:

PDF, 340 KB

english, 2018

3

Understanding of Carbon/Fluorine Co-implant Effect on Boron-Doped Junction Formed during Soak Annealing

Yeong, S. H., Colombeau, B., Mok, K. R. C., Benistant, F., Liu, C. J., Wee, A. T. S., Chan, L., Ramam, A., Srinivasan, M. P.

Journal:

Journal of The Electrochemical Society

Year:

2008

Language:

english

File:

PDF, 1.18 MB

english, 2008

4

Analytical compact modeling and statistical variability study of LDMOS

Zhou, Hongtao, Zhou, Xing, Benistant, Francis

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 2.35 MB

english, 2014

5

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Advanced TCAD simulation of local mismatch in 14nm CMOS technology FinFETs

Bazizi, E. M., Chakarov, I., Herrmann, T., Zaka, A., Jiang, L., Wu, X., Pandey, S. M., Benistant, F., Reid, D., Brown, A. R., Alexander, C., Millar, C., Asenov, A.

Year:

2015

Language:

english

File:

PDF, 1.82 MB

english, 2015

6

[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - First-principles evaluation of resistance contributions in Ruthenium interconnects for advanced technology nodes

Dixit, Hemant, Cho, Jin, Benistant, Francis

Year:

2018

Language:

english

File:

PDF, 181 KB

english, 2018

7

Mechanism of Stress Memorization Technique (SMT) and Method to Maximize Its Effect

Pandey, S. M., Liu, J., Hooi, Z. S., Flachowsky, S., Herrmann, T., Tao, W., Benistant, F., See, A., Chu, S., Samudra, G. S.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 415 KB

english, 2011

8

[AIP ION IMPLANTATION TECHNOLOGY: 17th International Conference on Ion Implantation Technology - Monterey (California) (8–13 June 2008)] AIP Conference Proceedings - Ultra-Shallow Junction Formation—Physics and Advanced Technology

Colombeau, B., Yeong, S. H., Tan, D. X. M., Smith, A. J., Gwilliam, R. M., Ng, C. M., Mok, K. R. C., Benistant, F., Chan, L., Seebauer, Edmund G., Felch, Susan B., Jain, Amitabh, Kondratenko, Yevgeniy

Year:

2008

Language:

english

File:

PDF, 3.20 MB

english, 2008

9

Victor: A new tool to measure shoe parameters that are important for ankle kinematics

Kerkum, Y.L., van den Noort, J.C., Brehm, M.A., Buizer, A.I., Benistant, M., Harlaar, J.

Journal:

Year:

2014

Language:

english

File:

PDF, 353 KB

english, 2014

10

Comparison of transverse-electron-focusing and scanning-tunneling-microscopy measurements on Ag(001) and (011) surfaces

Benistant, P. A. M., van de Walle, G. F. A., van Kempen, H., Wyder, P.

Journal:

Physical Review B

Year:

1986

Language:

english

File:

PDF, 546 KB

english, 1986

11

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - TCAD analysis of FinFET stress engineering for CMOS technology scaling

Gendron-Hansen, Amaury, Korablev, Konstantin, Chakarov, Ivan, Egley, James, Cho, Jin, Benistant, Francis

Year:

2015

Language:

english

File:

PDF, 986 KB

english, 2015

12

Predictive Simulation of Advanced Nano-CMOS Devices Based on kMC Process Simulation

Mok, K.R.C., Colombeau, B.., Benistant, F.., Teo, R.S., Yeong, S.H., Yang, B.., Jaraiz, M.., Chu, S.-F.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 1.37 MB

english, 2007

13

[IEEE ESSDERC 2014 - 44th European Solid State Device Research Conference - Venice Lido, Italy (2014.9.22-2014.9.26)] 2014 44th European Solid State Device Research Conference (ESSDERC) - Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation

Bazizi, E. M, Zaka, A., Herrmann, T., Benistant, F., Tin, J. H. M., Goh, J. P., Jiang, L., Joshi, M., van Meer, H., Korablev, K.

Year:

2014

Language:

english

File:

PDF, 2.97 MB

english, 2014

14

Direct Observation of Andreev Reflection

Benistant, P. A. M., van Kempen, H., Wyder, P.

Journal:

Physical Review Letters

Year:

1983

Language:

english

File:

PDF, 630 KB

english, 1983

15

Experimental and simulation study of the flash lamp annealing for boron ultra-shallow junction formation and its stability

K.R.C. Mok, S.H. Yeong, B. Colombeau, F. Benistant, C.H. Poon, L. Chan, M.P. Srinivasan

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 1.85 MB

english, 2008

16

AIP Conference Proceedings [AIP ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology - Valladolid, Spain (25–29 June 2012)] - TCAD simulation of the co-implantation species C, F, and N in MOS transistors

Bazizi, E. M., Mok, K. R. C., Benistant, F., Yeong, S. H., Teo, R. S., Zechner, C.

Year:

2012

Language:

english

File:

PDF, 865 KB

english, 2012

17

Analysis of USJ formation with combined RTA/laser annealing conditions for 28nm high-k/metal gate CMOS technology using advanced TCAD for process and device simulation

Bazizi, E.M., Zaka, A., Benistant, F.

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 1.81 MB

english, 2013

18

Angular relation and energy dependence of Andreev reflection

Benistant, P. A. M., van Gelder, A. P., van Kempen, H., Wyder, P.

Journal:

Physical Review B

Year:

1985

Language:

english

File:

PDF, 205 KB

english, 1985

19

Molecular dynamics with phase-shift-based electronic stopping for calibration of ion implantation profiles in crystalline silicon

H.Y. Chan, K. Nordlund, H.-J.L. Gossmann, M. Harris, N.J. Montgomery, C.P.A. Mulcahy, S. Biswas, M.P. Srinivasan, F. Benistant, C.M. Ng, Lap Chan

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 274 KB

english, 2006

20

[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - USJ engineering impacts on FinFETs and RDF investigation using full 3D process/device simulation

Bazizi, E. M, Zaka, A., Herrmann, T., Benistant, F., Tin, J. H. M., Goh, J. P., Jiang, L., Joshi, M., van Meer, H., Korablev, K.

Year:

2014

Language:

english

File:

PDF, 1.11 MB

english, 2014

21

[IEEE 32nd European Solid-State Device Research Conference - Firenze, Italy (2002.9.24-2002.9.26)] 32nd European Solid-State Device Research Conference - High Performance 0.1um CMOS Device with Suppressed Parasitic Junction Capacitance and Junction Leakage Current

H. Sik Kim,, Pandey, S.M., S. Yang Ong,, Sarkar, M., Y. Way Teh,, Benistant, F., Quek, E., Bhat, M., Chu, S.

Year:

2002

File:

PDF, 248 KB

2002

22

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - ab-initio study on Schottky-Barrier modulation in NiSi2/Si interface

Jiseok Kim,, Byounghak Lee,, Yumi Park,, Murali, Kota V R M, Benistant, Francis

Year:

2015

Language:

english

File:

PDF, 854 KB

english, 2015

23

The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

S.H. Yeong, B. Colombeau, K.R.C. Mok, F. Benistant, C.J. Liu, A.T.S. Wee, G. Dong, L. Chan, M.P. Srinivasan

Journal:

Materials Science and Engineering: B

Year:

2008

Language:

english

File:

PDF, 1.13 MB

english, 2008

24

[IEEE 2007 International Workshop on Junction Technology - Kyoto, Japan (2007.06.8-2007.06.9)] 2007 International Workshop on Junction Technology - Predictive Simulations and Optimization of Advanced Ultra-Shallow Junction formation for Nano-CMOS devices

Colombeau, B., Mok, K.R.C., Yeong, S.H., Benistant, F., Jaraiz, M., Chu, S.

Year:

2007

Language:

english

File:

PDF, 5.94 MB

english, 2007

25

[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Dopant diffusion in Si, SiGe and Ge : TCAD model parameters determined with density functional theory

Park, Y., Zechner, C., Oh, Y., Kim, H., Martin-Bragado, I., Bazizi, E. M., Benistant, F.

Year:

2017

Language:

english

File:

PDF, 729 KB

english, 2017

26

Characterization of nonwoven poly(ethylene terephtalate) devices functionalized with cationic polymer

Jianhua Ran, Gwladys Bénistant, Christine Campagne, Alain Périchaud, Feng Chai, Nicolas Blanchemain, Anne Perwuelz

Journal:

Journal of Applied Polymer Science

Year:

2012

Language:

english

File:

PDF, 1.01 MB

english, 2012

27

Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain

Liu, J. P., Li, K., Pandey, S. M., Benistant, F. L., See, A., Zhou, M. S., Hsia, L. C., Schampers, Ruud, Klenov, Dmitri O.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 572 KB

english, 2008

28

MODELING OF DEEP-SUBMICRON MOSFET DRIVE CURRENT

FRANCIS, BENISTANT

Journal:

International Journal of Nanoscience

Year:

2005

Language:

english

File:

PDF, 437 KB

english, 2005

29

[IEEE 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Kamakura, Japan (2017.9.7-2017.9.9)] 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - TCAD analysis of SiGe channel FinFET devices

Cho, Jin, Geelhaar, Frank, Rana, Uzma, Vanamurthy, Laks, Sporer, Ryan, Benistant, Francis

Year:

2017

Language:

english

File:

PDF, 515 KB

english, 2017

30

[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Quantitative model for switching asymmetry in perpendicular MTJ: A material-device-circuit co-design

Datta, Deepanjan, Dixit, Hemant, Agarwal, Samarth, Dasgupta, Avirup, Tran, Michael, Houssameddine, Dimitri, Chauhan, Yogesh Singh, Shum, Danny, Benistant, Francis

Year:

2017

Language:

english

File:

PDF, 765 KB

english, 2017

31

Comparison of ultra-thin gate dielectrics for 0.1 μm MOS devices

F. Bénistant, F. Mondon, F. Martin, G. Guégan

Journal:

Microelectronic Engineering

Year:

1995

Language:

english

File:

PDF, 328 KB

english, 1995

32

Comprehensive modeling of ion-implant amorphization in silicon

K.R.C. Mok, M. Jaraiz, I. Martin-Bragado, J.E. Rubio, P. Castrillo, R. Pinacho, M.P. Srinivasan, F. Benistant

Journal:

Materials Science and Engineering: B

Year:

2005

Language:

english

File:

PDF, 126 KB

english, 2005

33

Continuum modeling of post-implantation damage and the effective plus factor in crystalline silicon at room temperature

H.Y. Chan, M.P. Srinivasan, F. Benistant, K.R. Mok, Lap Chan, H.M. Jin

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

34

[IEEE 2001 6th International Workshop on Statistical Methodology - Kyoto, Japan (10 June 2001)] 2001 6th International Workshop on Statistical Methodology (Cat. No.01TH8550) - Accurate prediction of deep submicron CMOS device characteristics using inverse modeling techniques

Pandey, S.K., Qian Wensheng,, Sarkar, M., Benistant, F., Boyland, F., Redford, M.

Year:

2001

Language:

english

File:

PDF, 254 KB

english, 2001

35

Vesicular trafficking regulators are new players in breast cancer progression: role of TOM1L1 in ERBB2-dependent invasion.

Chevalier, Clément, Roche, Serge, Bénistant, Christine

Journal:

Molecular & Cellular Oncology

Year:

2016

Language:

english

File:

PDF, 1.59 MB

english, 2016

36

A View of Surfaces from the Inside and the Outside: TEF and STM

Kempen, H van, Benistant, P A M, Walle, G F A van de, Wyder, P

Journal:

Physica Scripta

Year:

1986

Language:

english

File:

PDF, 689 KB

english, 1986

37

Unethical Behavior and Group Identity in Contests

Benistant, Julien, Villeval, Marie Claire

Journal:

SSRN Electronic Journal

Year:

2017

Language:

english

File:

PDF, 875 KB

english, 2017

38

S-adenosyl-l-methionine inhibits phosphoinositide metabolism in the rat brain synaptosomal suspensions

Pierre Fonlupt, Christine Bénistant, Catherine Rey, Michel Lagarde

Journal:

Molecular and Cellular Biochemistry

Year:

1993

Language:

english

File:

PDF, 547 KB

english, 1993

39

Cytoplasmic signalling by the c-Abl tyrosine kinase in normal and cancer cells

Audrey Sirvent, Christine Benistant, Serge Roche

Journal:

Biology of the Cell

Year:

2008

Language:

english

File:

PDF, 679 KB

english, 2008

40

A specific function for phosphatidylinositol 3-kinase α (p85α-p110α) in cell survival and for phosphatidylinositol 3-kinase β (p85α-p110β) in de novo DNA synthesis of human colon carcinoma cells

Bénistant, Christine, Chapuis, H, Roche, Serge

Journal:

Year:

2000

Language:

english

File:

PDF, 293 KB

english, 2000

41

Eicosapentaenoic and Docosahexaenoic Acids Reduce PGH Synthase 1 Expression in Bovine Aortic Endothelial Cells

Fabienne Achard, Mathias Gilbert, Christine Bénistant, Sylvie Ben Slama, David L. Dewitt, William L. Smith, Michel Lagarde

Journal:

Biochemical and Biophysical Research Communications

Year:

1997

Language:

english

File:

PDF, 172 KB

english, 1997

42

Increase of in vitro brain [3H]muscimol binding after l-homocysteine administration to rat

Benistant, C., Rey, C., Fonlupt, P., Pacheco, H.

Journal:

Neuroscience Letters

Year:

1987

Language:

english

File:

PDF, 321 KB

english, 1987

43

Increase of GABA-stimulated diazepam binding after lipid methylation in membrane preparations from rat brain

Benistant, C., Rey, C., Fonlupt, P.

Journal:

Neuroscience Letters

Year:

1990

Language:

english

File:

PDF, 341 KB

english, 1990

44

[IEEE 2014 20th International Conference on Ion Implantation Technology (IIT) - Portland, OR, USA (2014.6.26-2014.7.4)] 2014 20th International Conference on Ion Implantation Technology (IIT) - TCAD Modeling for next generation CMOS devices

Benistant, F., Phang, Jacquelyn, Hermann, Tom, Bazizi, E.M., Zaka, Alban, Jiang Liu,

Year:

2014

Language:

english

File:

PDF, 1.32 MB

english, 2014

45

Application of molecular dynamics for low-energy ion implantation in crystalline silicon

H. Y. Chan, M. P. Srinivasan, N. J. Montgomery, C. P. A. Mulcahy, S. Biswas, H. L. Gossmann, M. Harris, K. Nordlund, F. Benistant, C. M. Ng, D. Gui, L. Chan

Year:

2006

Language:

english

File:

PDF, 509 KB

english, 2006

46

[IEEE Proceedings of the 2002 14th International Conference on Ion Implantation Technology - Taos, New Mexico, USA (2002.9.22-2002.9.27)] Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on - An enhanced 100nm CMOS logic technology with germanium preamorphized PMOS

Chan, S.T.H., Benistant, F., Al-Bayati, A.

Year:

2002

Language:

english

File:

PDF, 307 KB

english, 2002

47

A role for the tyrosine kinases cSRC and cYES in the progression of primary colonic adenocarcinomas

Christine, Bénistant, Jean-François, Bourgaux, Christine, Pignodel, Jean-Louis, Balmès, Jean-Pierre, Bali, Serge, Roche

Journal:

Gastroenterology

Year:

1998

Language:

english

File:

PDF, 174 KB

english, 1998

48

Understanding of Boron Junction Stability in Preamorphized Silicon after Optimized Flash Annealing

Yeong, S. H., Colombeau, B., Poon, C. H., Mok, K. R. C., See, A., Benistant, F., Tan, D. X. M., Pey, K. L., Ng, C. M., Chan, L., Srinivasan, M. P.

Journal:

Journal of The Electrochemical Society

Year:

2008

Language:

english

File:

PDF, 677 KB

english, 2008

49

Two functionally distinct pools of Src kinases for PDGF receptor signalling

Veracini, L., Franco, M., Boureux, A., Simon, V., Roche, S., Benistant, C.

Journal:

Biochemical Society Transactions

Year:

2005

Language:

english

File:

PDF, 180 KB

english, 2005

50

Unethical behavior and group identity in contests

Benistant, Julien, Villeval, Marie Claire

Journal:

Journal of Economic Psychology

Year:

2019

File:

PDF, 1.36 MB

2019

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